t-max tm maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com g d s apt50m65b2ll apt50m65lll 500v 67a 0.065 ? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular t-max ? or to-264 package power mos 7 r mosfet power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. 050-7012 rev d 12-2003 to-264 b2ll lll characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 33.5a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 500 0.065 100500 100 35 apt50m65b2ll_lll 500 67 268 3040 694 5.5 -55 to 150 300 6750 3000 downloaded from: http:///
dynamic characteristics apt50m65 b2ll - lll 050-7012 rev d 12-2003 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.200.16 0.12 0.08 0.04 0 0.5 0.1 0.3 0.7 0.9 0.05 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 1.34mh, r g = 25 , peak i l = 67a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 67a di / dt 700a/s v r 500v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 67a ) reverse recovery time (i s = - 67a , dl s /dt = 100a/s) reverse recovery charge (i s = - 67a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 67 268 1.3 680 17.0 8 symbol r jc r ja min typ max 0.18 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 250v i d = 67a @ 25c resistive switching v gs = 15v v dd = 250v i d = 67a @ 25c r g = 0.6 inductive switching @ 25c v dd = 333v, v gs = 15v i d = 67a, r g = 3 inductive switching @ 125c v dd = 333v, v gs = 15v i d = 67a, r g = 3 min typ max 70101390 87 141 4070 12 28 29 30 1035 845 15561013 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics downloaded from: http:///
050-7012 rev d 12-2003 typical performance curves apt50m65b2ll - lll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0123456789 0 10 20 3040 50 6070 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 180160 140 120 100 8060 40 20 0 1.41.3 1.2 1.1 1.000.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 180160 140 120 100 8060 40 20 0 7060 50 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 15 &10v 7v 5.5v 5v 6v 6.5v 8v v gs =10v v gs =20v v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +125c t j = +25c t j = -55c v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ 33.5a i d = 33.5a v gs = 10v 0.02710.0656 0.0860 0.00899f0.0202f 0.293f power (watts) junction temp. ( c) rc model case temperature downloaded from: http:///
apt50m65b2ll - lll 050-7012 rev d 12-2003 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 500 0 10 20 30 40 50 0 40 80 120 160 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 268100 10 1 1612 84 0 30,00010,000 1,000 100 10 200100 10 1 c rss c oss c iss t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms v ds =250v v ds =100v v ds =400v i d = 67a 1ms 100s t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 3 t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 30 50 70 90 110 10 30 50 70 90 110 10 30 50 70 90 110 0 5 10 15 20 25 30 35 40 45 50 v dd = 333v i d = 67a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 8070 60 50 40 30 20 10 0 30002500 2000 1500 1000 500 0 v dd = 333v r g = 3 t j = 125c l = 100h v dd = 333v r g = 3 t j = 125c l = 100h e on includes diode reverse recovery. 160140 120 100 8060 40 20 0 50004000 3000 2000 1000 0 downloaded from: http:///
050-7012 rev d 12-2003 typical performance curves apt50m65b2ll - lll 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max ? (b2) package outline to-264 (l) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions drain current gate voltage drain voltage 90% t j = 125 c 90% t d(off) 10% t f 0 switching energy t j = 125 c 10 % t d(on) drain current drain voltage gate voltage 5 % 90% 10 % t r switching energy i c d.u.t. apt60df60 v ce fi g ure 20 , inductive switchin g test circuit v dd g downloaded from: http:///
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